Thin (∼ 10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950° C-1050° C. RTCVD deposited Si layers have been oxidized using N2O at 1300° C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.