Materials Science Forum, Vol.483, 535-540, 2005
Hydrogen-saturated SiC-surfaces: Model systems for studies of passivation, reconstruction, and interface formation
Hydrogenation of SiC surfaces was carried out by annealing in ultra-pure hydrogen at temperatures of around 1000° C. The hydrogenated surfaces were studied using a variety of techniques and show exceptional properties which are discussed in the light of earlier studies of Si and SiC surfaces and interfaces.
Keywords:hydrogen;reconstruction;surface;interface;photoelectron spectroscopy;synchrotron radiation;low-energy electron diffraction;infrared absorption