Materials Science Forum, Vol.483, 493-496, 2005
Evolution of defect and hydrogen-related low temperature photoluminescence spectra with annealing for hydrogen or helium implanted 6H SiC
A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950° C to 1500° C. Differences in the hydrogen, D-I and D-II low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300° C anneal in the He implanted samples. A number of unidentified damage lines are also reported.