Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 10 to 45° has been investigated. On large-off-angled (15°-45°) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during epitaxial growth is observed on 4°-45° off-angled substrates with a low C/Si ratio. The incorporation of nitrogen was dramatically suppressed by increasing C/Si ratio irrespective of substrate's off-angle.