Materials Science Forum, Vol.457-460, 1581-1584, 2004
GaN laterally overgrown on sapphire by low pressure hydride vapor phase epitaxy
The influence of the growth pressure on the Epitaxial Lateral Overgrowth (ELO) process carried out in a Hydride Vapor Phase Epitaxy (HVPE) system was investigated. The results of Scanning Electron Microscopy (SEM) and High Resolution X-Ray Diffraction (HR-XRD) analysis are shown and discussed in relation to the growth morphology and the wing tilt generation as a function of the growth parameters.