N-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on p-type 3C-SiC homo-epitaxial layers grown on 3C-SiC substrates. The electrical characteristics of 3C-SiC MOSFETs with the current direction in the inversion layer perpendicular to [-110] ([-110] -perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). Both types of MOSFETs have very high channel mobility (230 cm(2)/Vs for [-110]-perpendicular MOSFETs and 215 cm(2)/Vs for [-110]-parallel MOSFETs), despite of the large negative shift of V-T. For the leakage current in the subthreshold region, drain current for [-110]-parallel MOSFETs is 100 times higher than those for [-110] -perpendicular MOSFETs. The breakdown of gate oxide occurs around 11MV/cm for both types of MOSFETs.