The breakdown characteristics of 4H-SiC power device with the three types of edge termination technique, field limiting ring(FLR), field plate(FP) and junction termination extension(JTE), are investigated. The n-type 4H-SiC wafer with 10mum epi-layer and a doping concentration of 5.4x10(15)/cm(3) is used to simulate the power pn diode with each type of edge termination structure. From the optimized simulation results, the breakdown voltages of pn diode with FLR, FP and JTE termination are 1810V, 1130V and 1000V, respectively. The peak electric field of the FP and JTE termination occurs at the surface and the interface between main junction and JTE region, which yields lower breakdown voltage. Conversely, the peak electric field of FLR termination at the interface between SiC and oxide is lower than that at the junction of the 2(nd) ring edge. This means that the breakdown of the FLR termination occurs at the bulk region of the device, so that the breakdown voltage of the FLR termination is higher and stable. The breakdown voltage of the fabricated pn diode with FLR termination is measured 1782V, which is similar to the simulated one. Therefore, in SiC power devices, the FLR structure seems to be suitable for obtaining an ideal breakdown and a practical planar termination technique.