Hydrogen (H-2) treatment is considered to be a promising method for SiC surface cleaning process before Schottky contact fabrication. We compared the forward current density-voltage (J-V) characteristics of Ni/4H-SiC Schottky diodes with and without H-2 treatment. From the forward J-V characteristics, the threshold voltage of H-2 treated samples was observed to be smaller than that of 5% diluted HF treated samples. Ideality factors were unchanged by the H-2 pre-treatment however, the barrier heights became smaller for H-2 treated samples. In this study, we found that H-2 pre-treatment has a severe influence on the electrical property of Schottky diodes and atomic bond configuration at SiC surface and Ni/SiC interface.