In this paper, we report on the simulation of Schottky barriers on SiC. In the past, several approaches have been made to understand the non-ideal behavior of Schottky diodes. We performed 2D simulations of the influence of barrier inhomogeneities (local barrier lowering) on the potential distribution and the current-voltage characteristics of Schottky barrier diodes. It is shown that two different groups of barrier inhomogeneites have to be considered. Barrier inhomogeneities with large lateral dimensions result in a "bulky" shape of the current-voltage characteristics. Barrier inhomogeneities of small lateral dimensions lead to a ideality factor greater then one (non-ideal behavior). An analytical model which is based on pure electrodynamics has been applied and compared to previous modcls from literature.