Materials Science Forum, Vol.457-460, 937-940, 2004
Contribution of X-Ray Diffraction simulations to experimental study of high energy He implantation at high dose in 4H-SiC at room temperature
Damage induced by 1.6 MeV helium implantation of 2x10(+16) ions/cm(2) in 4H-SiC, at room temperature, was characterized using X-ray Diffraction (XRD) experiments and simulations.