Hydrogen ions with energy 100 keV and doses ranging from 2(.)10(17) to 4(.)10(17) cm(-2) were implanted into the n-type 6H- and 4H-SiC samples at room temperature. The postimplantation sequential annealing of the irradiated samples was performed in the temperature range 500-1500degreesC. The parameters of the samples were determined by capacitance-voltage and current-voltage measurements, photoluminescence technique, and atomic-force microscopy. It was found that surface blistering appears after postimplantation annealing at 800degreesC in the case of hydrogen implantation with doses < 3(.)10(17) cm(-2). Irradiation leads to the formation of a strongly compensated layer at depths close to the projected range of the protons. As a result of annealing at 500degreesC, the compensated region expands as far as the surface of the sample. A decrease in the resistivity of the compensated layer begin after annealing at similar to1200degreesC and ends after annealing at 1500degreesC. After irradiation, the PL intensity decreases dramatically for all the simples. Recovery of the PL intensity starts after annealing at 800degreesC and is complete upon annealing at a temperature of 1500degreesC.