Measurement of two-photon absorption (TPA) coefficient beta in epitaxial 4H-SiC is performed over a wide spectral range using time-resolved spectroscopy and tunable wavelength laser pulses. We find that beta increases exponentially between 0.1 cm/GW < beta < 10 cm/GW over the two-photon energy range 4 eV > 2hv > 5 eV and then saturates to value of 50 cm/GW approaching 2hv = 6.5 eV. The direct optical transitions at the M critical point of zone structure are shown to contribute mainly to the band edge of the TPA spectra.