Crystal growth of 6H-SiC(01-14) on 3C-SiC(001) substrates was studied. In order to obtain large size alpha-SiC crystal, it is important to grow 6H-SiC layer on 3C-SiC substrate. There is a possibility of obtaining low density of MOS interface states using 6H-SiC(01-14) plane. Sublimation epitaxy was used to obtain 6H-SiC(01-14) grown layer. The grown surface of 6H-SiC(01-14) was observed by optical microscope. The polytype of the grown layers were investigated by photoluminescence and Raman scattering spectroscopy. It is shown that polytype transformation from 3C-SiC to 6H-SiC was achieved.