4H-SiC {03-38} can be obtained by 54.7degrees off-oriented to [01-10] from [0001]. Growth on 4H-SiC {03-38} substrates has the potential to achieve micropipe and stacking fault free wafers. Moreover, this plane showed lower interface state density in MOS structures than that in traditional {0001} plane. Growth on 4H-SiC {03-38} substrate was carried out by the sublimation method with modified crucible design. A single crystal was grown with separation from the polycrystal and a height of 18 mm was achieved. Molten KOH etching revealed that the wafer was divided into three regions and stacking faults propagated to [01-10]. It was revealed by Raman scattering that 4H- and 6H-SiC got mixed in the stacking fault region.