Polycrystalline silicon films were grown from Si2H6 by Low-pressure Chemical Vapor Deposition (LPCVD) at 800K and in-situ laser annealing of amorphous Silicon seed layers deposited on different metallic films. According to the Metal Induced Crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. The influence of different metals on the obtained morphologies and crystalline phases were investigated by X-ray diffraction and Scanning Electron Microscopy. The experimental results show that the film morphology depends strongly on the metal used to promote the silicon crystallization.