화학공학소재연구정보센터
Materials Science Forum, Vol.453-454, 15-20, 2004
Data bases for modeling plasma devices for processing of integrated circuits
In this paper we compile the data on electron methane scattering cross-sections and transport coefficients that provide a data base for plasma models of etching, deposition and other technologies involving CH4. Cross section sets were compiled and tested against the swarm data and transport coefficients were calculated and measured for DC and RF fields. We also indicate the conditions where kinetic effects in the RF field require an extension of the present day models of plasma etching deposition and cleaning.