A normally off 4H-SiC power MOSFET blocking 1200 V is presented. Its structure, process and electrode materials are designed as close as possible to that of standard Si power MOSFETs, especially the gate electrode is made of polycrystalline silicon. The gate oxide is prepared by oxidation in nitrous oxide. In order to make the device compatible with standard gate drivers for power electronics the gate oxide thickness has been increased to 72 nm. With respect to long term stability the device is characterized at a maximum oxide field strength of 2.5 MV/cm. On- and off-state characteristics are presented and analyzed in detail.