We report results of photoluminescence (PL) and Light Beam Induced Current (LBIC) analysis of extended defects in 6H-SiC. The spectroscopical results have been correlated with optical and Atomic Force Microscopy (AFM) analysis of samples before and after selective etching. The PL spectra performed by optical excitation above the band gap in the 10-300 K range show, in particular, an intense emission at 1.8 eV, which could be related to a deep level. PL measurements with optical excitation below the gap have confirmed the presence of another mid gap level. Spatially resolved analysis carried out by LBIC on defective zones suggests that this last mid gap level could be associated to the extended defects.