The microscopic structure around stacking faults (SF) in 3C-SiC was observed using cross-sectional transmission electron microscopy Domains separated by SF were displaced along the <111> direction from each other. The amount of displacement between the domains depended on how many layers of Si-C pairs were involved in the SE Therefore, SFs in 3C-SiC reduce the elastic lattice deformation by rearranging the structure and density with increasing 3C-SiC thickness.