By using the HTCVD technique together with Al doping, highly p-type doped 2" diameter 4H-SiC off-axis substrates with micropipe densities below 10 cm(-2) were grown. The Al concentration in the substrates could be varied from low 10(15) cm(-3) to low 10(19) cm(-3). Bulk resistivities down to 0.5 Omega-cm were realized. There were no indications of micropipe formation from Al precipitates, on the contrary, micropipe closing was observed.