Since its discovery in January 2001, the production of high quality MgB2 thin films has proved to be difficult. The relative ease with which oxidation occurs to the component elements is a great problem for the precursor film, while the vapor pressure of magnesium has meant that a post anneal is almost always necessary for production of good quality, high T-c films. For device structures it will be necessary to develop an in-situ method of growing MgB2 thin films. Although some work has been done on this, the principal method proposed has relied on the highly toxic boron hydride gas and, therefore, there is space for alternative, less toxic, production methods to be developed. We are developing a technique for the in-situ growth of this material based on a combination of laser deposition and chemical vapor deposition techniques. The Raman spectra of MgB2 films grown by DC magnetron sputtering have been studied and the results indicate a correlation between the Raman active E-2g mode and the onset of superconductivity in the films. By analysis of the Raman spectra a model is proposed for the mechanism behind the T-c suppression.