Effects of strip thickness and flow rate of hydrogen on surface-energy-induced selective growth and final texture have been investigated in thin-gauged 3%Si-Fe strips containing 90ppm sulfur. After final isothermal annealing at 1200degreesC for 47.9 ks, a nearly perfect {110}<001> Goss texture was obtained under a flowing hydrogen atmosphere of 10 l/min. The texture was, however, mostly composed of {100} components under a flow rate of 3 l H-2/Min. At least within the thickness range of 40-100 mum, the final texture showed little dependence on the strip thickness. In case of the thinner strips, the concentration of surface-segregated sulfur was overall lower and showed a faster decrease with annealing time, due to a deficient supply of sulfur from the thinner bulk interior. This faster depletion of the surface-segregated sulfur shortens the time range of surface-energy-induced selective growth of {100} grains and makes the complete consumption of Goss grains difficult. The present result implies that the segregation kinetics of sulfur at the thinner strips is more responsible for obtaining Goss texture than the smaller average grain size arising from the strip thickness.