The first experimental results of a 600 V 4H-SiC current limiting device are shown. This device limits the current as the bias voltage increases. The forward conduction is ensured by an N type implanted channel (doping species: nitrogen) on top of a P+ implanted layer (doping species: aluminum). The prototypes reach a saturation current density of 900 Acm(-2), with a specific on-resistance of 13 mOmegacm(2). The 4H-SiC current limiting devices belong to the best set of Accu-MOSFETs devices reported in the literature.