4H-SiC Schottky diodes having a main titanium contact surrounded by a narrow ring-shaped nickel contact have been fabricated. The diodes display low reverse leakage currents, corresponding to those observed in nickel Schottky contacts, and low forward barrier heights, corresponding to titanium diodes. The diodes exhibit an unrecoverable breakdown at voltages up to 1250 V and a high on/off current ratio (at 1V/-500V) of about 5-10(8).