Effects of different annealing procedures on both surface morphology and electrical characteristics are investigated for 6H-SiCs implanted with aluminum ions by atomic force microscopy (ATM) and Hall effect measurement. Annealing at temperatures below 1700degreesC for 3 min provides flat surface. As for electrical characteristics, the hole concentration increases with increasing annealing temperature and time. A sufficient value of mobility is obtained by high temperature annealing for 3 min.