We propose a modified laser annealing method for the activation of the ion-implanted dopants in SiC. This method is characterized by (1) a high electrical activation efficiency accomplished by the combination with the thermal annealing below 800degreesC, (2) no surface roughness and no redistribution of the dopants achieved by using "multiple step irradiation" method. We succeeded to achieve a low sheet resistance in P+ ion-implanted SiC comparable to that of the furnace annealing at 1600degreesC by using this method.