Materials Science Forum, Vol.389-3, 787-790, 2002
Electrical activation of implanted phosphorus ions in (0001)/(11(2)over-bar0)-oriented 4H-SiC
Two phosphorus (P) box-profiles (PI: [P]=2x10(18)cm(-3), P2: [P]=2.4x10(20)cm(-3)) are generated by multiple implantation into (0001)- or (1120)-oriented 4H-SiC epilayers. Hall effect investigations are conducted to determine whether the electrical activation of P-ions depends on the orientation of the epilayers and whether P-donor concentrations above 10(20)cm(-3) can be reached.