화학공학소재연구정보센터
Materials Science Forum, Vol.363-3, 514-516, 2001
Damage induced by argon ion implantation in cubic zirconia
In order to assess the possibility of using zirconia in the storage confinement procedure of nuclear waste Rutherford Backscattering Spectrometry associated with Channeling (RBS/C) and Slow Positron Implantation Spectroscopy (SPIS) investigations were carried out to study microstructure damages induced by 540 keV argon ion irradiation in cubic single crystal ZrO2. The fluence dependence of either the damaged fraction (F-d) or the Doppler broadening lineshape, parameter (S) allows to define common damage stages and highlights the complementarity of both techniques. Indeed, the evolution versus fluence analyzed over 4 orders of magnitude starting from 10(12) at.cm(-2) reveals the sensitivity of SPIS for low fluences, while indicating that the RBS technique is a better tool for high fluences.