We report here the achievement of compressive strained 3C-SiC heteroepitaxial layers on Si (100) by APCVD. Substrate curvature was used to measure the residual stress in the beta -SiC films. Experimental measurements showed the dependence of the stress value with the conditions of the carburization. We demonstrate the possibility to achieve 3C-SiC lavers with compressive or tensile stress by controlling the early stage of the growth.