Bi0.85Pr0.15Fe0.9Co0.1O3 (BPFCO) thin films were deposited on Pt(i 1 1)/TiO2/SiO2/Si(1 0 0) substrates, with SrRuO3 as buffer layer, by radio frequency magnetron sputtering. Oxygen-vacancies-related dielectric relaxation and scaling behaviors of Bi0.85Pr0.15Fe0.9Co0.1O3 (BPFCO) thin films have been investigated by temperature-dependent impedance spectroscopy. It can be confirmed that it is the high density of oxygen vacancy that causes the occurrence of the double loop hysteresis. The physical nature of relaxation process corresponding to oxygen vacancies was also discussed. (C) 2013 Elsevier Ltd. All rights reserved.