In the present study, the authors report the fabrication of ZnO homojunction by the deposition of 2 at.% Eu doped ZnO (n-ZnO:Eu) layer grown over the 4 at.% Ag-N dual acceptor doped ZnO (p-ZnO:(Ag, N)) layer by spray pyrolysis technique. The as-grown n-type and p-type ZnO films on glass substrates have been characterized by Hall measurements, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), UV-vis and luminescence spectroscopy techniques. Hall measurement shows that 4 at.% ZnO:(Ag, N) film exhibits p-type conductivity with high hole concentration of 2.17 x 10(18) cm(-3) and n-type conductivity is observed in the ZnO:Eu film. The current-voltage characteristics measured from the two-layer structure show typical rectifying characteristics of p-n homojunction with a low turn on voltage of about 1.85 V. (C) 2013 Elsevier Ltd. All rights reserved.