A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor adsorption/desorption mechanism, with special emphasis on the bottom-up filling of these structures. The proposed model is applicable for both 2-component (suppressor and accelerator) and 1-component (suppressor only) Cu plating chemistries. Numerical simulation was performed for the filling of 5 mu m(diameter) x 40 mu m(depth) vias. Simulated Cu profiles and the corresponding dependencies on additive concentration are confronted with existing experimental results. (C) 2013 The Electrochemical Society. All rights reserved.