In this study, a device structure containing Eu(TTA)₃(Phen) was fabricated by bacuum evaporation method, where aromatic diamine (TPD) was used as a hole transporting material, Eu (TTA)₃(Phen) as an emitting material, and tris (8-hydroxyquinoline) aluminum (AlQ₃) as an electron transporting layer. The EL and I-V characteristics of these structures were investigated. They showed the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)₃(phen). It is inferred from the measured I-V characteristics that the preferred carrier transport mechanism is the trapped- charge-limited current.