The nitrogen doping behavior of 4H-SiC was investigated by the fop seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940 degrees C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogendoped SiC with a concentration of 1.1 x 10(20) cm(-3) was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0 x 10(19) cm(-3). The lowest resistivity of approximately 0.010 52 cm was obtained with SFs-free. Based on the both undoped and nitrogendoped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed. (C) 2014 Elsevier B.V. All rights reserved.