Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy

Albert S; Bengoechea-Encabo A; Sabido-Siller M; Mueller M; Schmidt G; Metzner S; Veit P; Bertram F; Sanchez-Garcia MA; Christen J; Calleja E

Journal of Crystal Growth, Vol.392, 5-10, 2014

DOI10.1016/j.jcrysgro.2014.01.030 Export Citation

Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy

Albert S, Bengoechea-Encabo A, Sabido-Siller M, Mueller M, Schmidt G, Metzner S, Veit P, Bertram F, Sanchez-Garcia MA, Christen J, Calleja E

This work reports on the growth and characterization of InGaN/GaN core-shell structures by plasma-assisted molecular beam epitaxy on an ordered array of top-clown patterned GaN microrocls fabricated on a GaN/sapphire substrate. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) was confirmed by spatially resolved cathodoluminescence performed using scanning electron microscopy as well as scanning transmission electron microscopy. The In content of the InGaN shell is controlled by means of the growth temperature and the BIN ratio. (c) 2014 Elsevier B.V. All rights reserved,

Keywords:Etching;Nanostructures;Molecular beam epitaxy;Selective epitaxy;Nitrides;Semiconducting III-V materials