Copper oxide nanowires (diameter: 10-100 nm and length: 7-10 mu m) were grown on copper foil deposited with etched graphene. The growth processes of CuO nanowires on the surface of Cu foil and graphene-deposited Cu foil in conditions of 450 degrees C treatment temperature and different treatment Limes in air were compared based on field emission scanning electron microscopy images. The formation of seeds, the transportation of source and the growth of CuO nanowires during the treatment were described in detail based on surface melting phenomenon and Wagner's theory. In addition, selected samples were characterized by X-ray diffraction, transmission electron microscopy, high resolution TEM and selected area electron diffraction to support the discussion. (C) 2013 Elsevier B.V. All rights reserved,