Previous Article Next Article Table of Contents Journal of Crystal Growth, Vol.383, 172-172, 2013 DOI10.1016/j.jcrysgro.2013.08.033 Export Citation Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition (vol 381, pg 139, 2013) Masumoto K, Kudou C, Tamura K, Nishio J, Ito S, Kojima K, Ohno T, Okumura H Please enable JavaScript to view the comments powered by Disqus.
