We have progressed the growth procedure for high-density highly-uniform In(Ga)As/GaAs quantum dots (QDs) by using molecular beam epitaxy and have demonstrated high-gain 1.06-mu m QD lasers for consumer electronics. The structural and optical properties of QD crystals have been improved by optimizing the growth temperature, employing InGaAs QDs in place of InAs QDs, and utilizing a height-limiting growth method, which is called the Indium-flush procedure. Lasers containing ten-layer height-limited InGaAs QDs provided a net modal gain as high as 60 cm(-1), which is one of the largest values for InAs/GaAs QD lasers. These results will promise the development of optoelectronic devices with high-density multiply-stacked QDs in the 1-mu m band. (c) 2013 Elsevier B.V. All rights reserved.