We report our recent works on the growth and fabrication of InAs/GaSb type II superlattice detectors by solid source molecular beam epitaxy. Lattice mismatch between the superlattice and the GaSb substrate reached 1.5 x 10(-4). The full width at half maximum of the first order satellite peak from X-ray diffraction was 28 ''. Full simulation of the X-ray scanning curves showed the detailed composition of the InAsSb interface layers. Single element detectors and focal plane arrays were fabricated using wet chemical etching. The devices with 10 ML InAs/10 ML GaSb in each superlattice period showed a 50% cutoff wavelength of 5.4 mu m at 77 K. The dark current density at -20 mV bias was 3.8 x 10(-7) A/cm(2) and the resistance-area product at zero bias 7.5 x 10(4) Omega cm(2).The quantum efficiency was measured to be 25%. The blackbody detectivity and the peak wavelength detectivity were 7.6 x 10(11) cm Hz(1/2)/W and 3 x 10(12) cm Hz(1/2)/W, respectively. The focal plane array was characterized with an integration time of 2.7 ms and F/2.0 optics. The percentage of the dead pixels was only 1.8%, non-uniformity 5.41% and a noise equivalent differential temperature 33.4 mK. (c) 2013 Elsevier B.V. All rights reserved.