This paper reports the first successful growth and structural control of cubic InN (c-InN) nano-scale dots. The samples were grown on MgO (0 0 1) substrates by RF-N-2 plasma molecular beam epitaxy (RF-MBE). Cubic GaN (c-GaN) underlayers with a thickness of 500 nm were grown on the substrates followed by the growth of a few nm-thick InN under various conditions. The formation of InN dots aligned along the < 1 1 0 > directions were confirmed by atomic force microscopy (AFM). X-ray diffraction (XRD) measurements suggested the cubic zincblende lattice structure of the obtained InN dots. The area density and size of c-InN dots were well controlled by adjusting the growth conditions such as the substrate temperature and the In flux, and a very high dot density of 2.2 x 10(11) cm(-2) was successfully obtained at a growth temperature of 470 degrees C and an In flux of 7.0 x 10(-5) Pa. (c) 2013 Elsevier B.V. All rights reserved.