We investigated the structural properties of 2-mu m thick Si0.58Ge0.42 thin films grown on a combined set of Si1-xGex stepwise buffer layers and a Si0.51Ge0.49 strain-inverted layer on Si substrates. Raman spectroscopy and Rutherford backscattering measurements showed smaller residual strain and superior crystalline lattice ordering compared to a sample without any buffer layer. Furthermore, a Si0.58Ge0.42 thin film with a low dislocation density of less than 10(5) cm(-2) and a smooth surface roughness of 0.903 nm can be achieved by using a combined set of Si1-xGex stepwise buffer layers and a Si0.51Ge0.49 strain-inverted layer, because most dislocations can be confined within each Si1-xGex buffer layer. (c) 2013 Elsevier B.V. All rights reserved.