In this work, we present a Raman scattering study of GaAs layers grown on ((6) over bar(3) over bar(1) over bar)-oriented substrates by molecular beam epitaxy. A set of samples whose morphology sustained different corrugation order were grown by MBE by varying the growth parameters such as temperature and As/Ga flux ratio. We employed polarized Raman spectroscopy using the backscattering configurations Z(XX) (Z) over bar, Z(XY) (Z) over bar and Z(YY)(Z) over bar. According to the calculated dipole selection rules both TO and LO phonons are allowed for backscattering from a perfect GaAs ((6) over bar(3) over bar(1) over bar) crystal, but with the intensity of the TO phonon much larger than that of the LO phonon. However, it is found that the selection rules differ for corrugated samples. Besides, the TO/LO phonon resonances intensity ratio and the LO peak asymmetry depend on the corrugation order of the samples. (c) 2013 Elsevier B.V. All rights reserved.