The density of Bi-induced localized states in GaAs1-xBix was evaluated by measuring the photoluminescence (PL) properties of p-type MBE-grown GaAs1-xBix with various doping levels. On the basis of an analysis of the temperature-dependent PL spectra and with the charge neutrality equation that incorporated the Bi-induced localized levels, the density of the Bi-induced levels is estimated to be similar to 1 x 10(17) cm(-3). Accordingly, similar to 2 x 10(-4) of the incorporated Bi atoms contribute to the formation of localized states. (c) 2013 Elsevier B.V. All rights reserved.