We report the site-selective formation of Ga droplets on a surface where self-assembled GaAs quantum dots (QDs) were formed by droplet epitaxy. On the surface with the GaAs QDs, all the Ga droplets form adjacent to the QDs and are attached to the (1 1 1)B side facets of the QDs, which was confirmed by selective etching. While some of the QDs have two small droplets on both sides, most of the QDs have one large droplet on one side. We attribute the mechanism of the site-selectivity of the droplets to the morphology of the QDs and the high surface energies of the (1 1 1)B side facet. (c) 2013 Elsevier B.V. All rights reserved.