We attempted the vapor-liquid-solid (VLS) growth of single-phase 2H-SiC thick layers in Li-Si solution under CH4 continuous flow. The thickness of liquid phase epitaxy (LPE) layers increased linearly with the CH4 flowing period without slowing of the growth rate, reaching 270 mu m (45 mu m/h). Furthermore, a high growth temperature of 1180 degrees C and optimum partial pressure of CH4 gas allowed an increase in the thickness of the LPE layers, resulting in a thickness of 850 mu m. A high resolution transmission electron microscope (HR-TEM) and X-ray diffraction (XRD) measurements showed that these LPE layers were a 2H-SiC polytype. We concluded that VLS growth in Li-Si solution under CH4 continuous flow is useful for the long-term growth of a thick 2H-SiC layer. (C) 2013 Elsevier B.V. All rights reserved.