In this paper we present the epitaxial growth and characterization of an InP-based micro-cavity light emitting diode (LED) with up to 3 mu m light emission by using GaInAs/GaAsSb-based type-II quantum wells. The LED was grown by LP-MOVPE and achieves emission from 2 mu m to 3 mu m at room-temperature. Furthermore a second LED with centered emission at 2.8 mu m has been realized. Hence, the achievable long-wavelength electroluminescence emission with InP-based materials has been extended up to 3 mu m. (C) 2012 Elsevier B.V. All rights reserved.