In this paper we demonstrate work on developing the kinetic Wulff plots and quasi-equilibrium crystal shapes of GaN by hydride vapor phase epitaxy to understand the stable polar, semipolar, and nonpolar planes that emerge naturally from the GaN crystal. High quality bulk m-plane GaN substrates were masked with circular openings to perform selective area growth studies. Growths were performed by hydride vapor phase epitaxy over a range of temperatures, pressures and carrier gases. The quasi-equilibrium crystal shapes were shown to have clear m-plane {1 (1) over bar 00} facets and a sharp and flat (000 (1) over bar) N-face or c- face. The (0001) Ga-face or c+ face became faceted with {10 (1) over bar1} planes emerging with reduced pressures and temperatures. Based on the stable facets, kinetic Wulff plots were constructed. (C) 2013 ElsevierB.V. All rights reserved.