In the present study, single-step electrodeposition of a CuInGaSe2 film from the sulfosalicylic acid electrolyte containing Cu(II), In( III), Ga(III), and Se(IV) species was examined. It was showed that individual Ga(III) ions do not reduce at glass carbon electrode in selected conditions. Deposition of the desired CuInGaSe2 film as the main compound was achieved by fixing appropriate applied potentials. The analysis of cyclic voltammetry curves for joint reduction of two, three and four ions composed this semiconductor compound allowed to choose the optimal conditions for electrodeposition. The applied potential should be more negative, then -700 mV, ratio concentration ions in electrolyte Cu(II):Se(IV):In(III):Ga(III) equal 1:2:4:4, t = similar to 70 degrees C. It was fabricated p-type CuInGaSe2 as a single phase. A new possible pathway to prepare chalcopyrite structure thin films from simple single-step electrodeposition of a quaternary precursor from sulfosalicylic acid should be used for photovoltaic application. (C) 2013 Elsevier Ltd. All rights reserved.