Chalcopyrite CIS or CIGS have been regarded as promising absorbing materials for thin-film solar cells with widespread commercialization prospects. The most critical material properties of a CIS absorption layer that affect the overall PV performance include its microstructure and composition at a given bandgap energy. In this study, dense CISe films with high crystallinity and uniform, flat surfaces were fabricated on In2Se3/ITO employing single bath electrochemical deposition by adjusting the deposition parameters, such as the precursor concentration, pH, and applied potential. A simple formula is presented based on Faraday's law to quantitatively estimate the density of the electrodeposited thin films: from this, it was found that the as-deposited films had a very high relative density of 0.73. The high green density of the as-deposited film led to the full densification of the CISe film with at 10 mu m sized grains. The binary selenide phase remaining in the sintered film was subsequently etched out using a KCN solution, resulting in an overall Cu-deficient composition in the film of [Cu]/[In] = 0.95. (C) 2012 Elsevier Ltd. All rights reserved.