ZnO nanowires homojunction LED with phosphorus-doped p-ZnO nanowires/n-ZnO nanowires structure was fabricated on Si substrate by simple chemical vapor deposition. The scanning electron microscope show well-aligned undoped ZnO nanowires and phosphorus doped ZnO nanowires with uniform diameter, length, and density were grown perpendicularly on Si substrate. The phosphorus related acceptor emissions were observed from photoluminescence spectra of phosphorus-doped ZnO nanowires at 20 K. Moreover, the current-voltage measurement of ZnO nanowires homojunction LED showed a good rectifying behavior with a turn-on voltage was about 3.8 V and a reverse breakdown voltage was about 6 V. Distinct electroluminescence with ultraviolet and visible emissions was detected from this device at room temperature. (C) 2011 Elsevier B. V. All rights reserved.